1.

Graphene flakes at the SiO[sub]2/organic-semiconductor interface for high-mobility field-effect transistors

Exfoliated graphene flakes at dielectric/organic semiconductor interface yield high-transconductance thin film transistors. Sevenfold increase in charge mobility was observed in poly(3-hexylthiophene) thin film transistors with graphene flakes. This effect is applicable to both, solution processed, and vacuum-evaporated organic transistors.

COBISS.SI-ID: 4056059

2.

Influence of a gold substrate on the optical properties of graphene

Spectroscopic ellipsometry combined with measurements of electrical characteristics and Kelvin probe force microscopy have been employed to investigate the interaction between graphene and a gold substrate, and the consequent changes of graphene's complex refractive index on gold. A strong blue shift, as much as 350 meV, of the prominent absorption peak of graphene has been observed,

COBISS.SI-ID: 3676155

3.

Factors determining large observed increases in power conversion efficiency of P3HT:PCBM solar cells embedded with Mo6S9−xIx nanowires

We achieved 52% relative increase in efficiency of solar cells embedded with Mo6S9−xIx nanowires. The hole mobility was improved by a factor of 2.5. Polymer regioregularity has a large effect on Mo6S9−xIx containing solar cells’ performance. A small enhancement effect on light scattering by surface-coated Mo6S9−xIx nanowires was found.

COBISS.SI-ID: 29186855