J1-4244 — Final report
1.
Coexistence of anomalous and normal diffusion in integrable Mott insulators

The probablility for sielectric breakdown within the Mott insulator was evaluated analytically and numerically and the dependence qualitatively differs from previous theoretical proposals.

COBISS.SI-ID: 2522212
2.
Ultrafast charge recombination in a photoexcited Mott-Hubbard insulator

We present a calculation of the recombination rate of the excited holon-doublon pairs based on the two-dimensional model relevant for undoped cuprates, which shows that fast processes, observed in pump-probe experiments on Mott-Hubbard insulators in the picosecond range, can be explained even quantitatively with the multimagnon emission. The precondition is the existence of the Mott-Hubbard bound exciton of the s-type. We find that its decay is exponentially dependent on the Mott-Hubbard gap and on the magnon energy, with a small prefactor, which can be traced back to strong correlations and consequently large exciton-magnon coupling.

COBISS.SI-ID: 2579044