We have been investigating electric transport properties of 5,11-bis(triethylsilylethynyl) anthradithiophene (TES ADT). TES ADT is one of the most promising, solution-processable small-molecular organic semiconductors – was analyzed, revealing the highest performing polymorph among four solid-state phases, opening pathways toward the reliable fabrication of high-performance bottom-gate/bottom-contact transistors.
COBISS.SI-ID: 2731515
We have examined the effect of submonolayer coverage of 1-pyrene butyric acid on charge carrier transport in reduced graphene oxide. We have modeled the interaction of 1-pyrene butyric acid molecules with graphene and determined the amount of charge transfer at the interface between the two materials. The effect of 1-pyrene butyric acid as electron acceptor was determined by transfer characteristics measurements on thin film transistors for thick layers. By using time-resolved photocurrent measurements we were able to detect a reduction of electron mobility in reduced graphene oxide for coverage as low as 0.08%.
COBISS.SI-ID: 2734075
Time-of-flight measurements (TOF) of the photocurrent in thin organic semiconductor layers represent an effective way to extract charge carrier mobility. We compared time-dependence of the photocurrent, measured in the samples comprising thin layers of poly-3-hexylthiophene, with the Monte Carlo simulations. In the simulations, we have used both, a position-independent and a position-dependent electric field. We obtained a favorable agreement between the simulations and the measurements only in the case of position-dependent electric field. We demonstrate that the charge carrier mobility may be underestimated by more than one order of magnitude, if a position-independent electric field is used in the calculations of the mobility.
COBISS.SI-ID: 2495227