Miniature detection system capable of selective detection of vapor traces of different explosives is presented. The article presents: the principles of operation, compares optical and electronic detection systems, explains the function of chemical modification. It presents the implementation of MEMS differential sensor, and procedure for chemical functionalization. Electronics and noise optimization is a key procedure to achieve excellent sensitivity. The article describes also the calibration procedure, system level simulations and its results, implementation of a complete measurement system, implementation of vapor generator used for laboratory measurements and some initial laboratory and field measurements. The resulting sensor system has excellent sensitivity that is in the range of 3ppT for TNT and 0.5ppt for RDX.
COBISS.SI-ID: 25306919
Operations of a self-mixing terahertz signal detector combined with a low noise amplifier and a properly balanced - folded dipole or slot antenna for concentrating millimeter wave signals to NMOS detectors is described. The detector was optimized to 300 GHz signals. Achieved noise equivalent power (NEP) was estimated to 320 pW/√Hz while the total output referred noise of 2.1 μV//√Hz was measured at amplifier gain of 46 dB.
COBISS.SI-ID: 9127252
In a paper a system for hand disinfection of persons entering a strictly controlled hospital rooms regarding the possibility of contagion the patients. Such rooms are among others the surgery and intensive care rooms. The system containing a chemical sensor designed and manufactured at Laboratory for microelectronics is supported by RFID technology. The paper has been rated in top 20 papers in 2012.
COBISS.SI-ID: 9033300
A compact CMOS implementation of the master-slave register pair with common clock is presented. The built-in latency time, defined by the clock pulse width allows large clock skewing at the expense of clock cycle time reduction.
COBISS.SI-ID: 7831636
SU8, the near-UV photosensitive epoxy-based polymer was used as a sensor layer in the capacitive chemical sensor. It was observed that the response of the sensor slowly increases with the temperature applied in hard-baking process as long as it remains below 300°C. At this temperature the response of the sensor abruptly increases. Fully crosslinked structure of the sensor layer becomes opened and disordered when the sensor is hard-baked at temperatures between 300°C and 320°C. These changes in chemical structure were analyzed by Fourier-transform infrared spectroscopy.
COBISS.SI-ID: 4060442