P1-0135 — Annual report 2009
1.
Measurement of the Differential Branching Fraction and Forward-Backward Asymmetry for B-)K(*)l+l-

Measurement of the angular distribution (forward-backward asymmetry) of charged leptons in B-)K(*)l+l- decays, which is sensitive to possible NP contributions. The asymmetry dependence on the invariant mass of the lepton pair exhibits slight deviations from the SM prediction.

COBISS.SI-ID: 23094055
2.
of inclusive radiative B-meson decays with a photon energy threshold of 1.7 GeV

Measurement of the branching fraction for B -) Xs??radiative decays and of the photon energy spectrum. Due to theoretical uncertainties it is important to perform the measurement to lowest achievable photon energies. The measurement puts stringent constraints to parameters of various SM extensions, e.g. on the mass of the charged Higgs boson () 300 GeV/c2).

COBISS.SI-ID: 23286055
3.
Measurement of anomalously high charge collection efficiency in n(+)p strip detectors irradiated by up to 10(16)n(eq)/cm(2)

In this paper, we present measurements of signals in n(+)p strip detectors caused by fast electrons from a Sr-90 source and read out by an SCT128A chip. Detectors were irradiated with reactor neutrons up to 10(16)n(eq)/cm(2). The collected charge was measured up to very high bias voltages of 1700V. We measured the most probable value of collected charge as high as before irradiation with detectors irradiated up to 3E15 n(eq)/cm(2). Excellent performance with nearly 50% of the charge collected was also obtained with the detector irradiated to 1E16 n(eq)/cm(2).

COBISS.SI-ID: 22608423
4.
Time-dependent Dalitz plot measurement of CP parameters in B0 › KSpi+pi- decays

Decay time dependent analysis of the Dalitz distribution in B0 › KSpi+pi- decays. Determination of the unitarity angle phi1 for decays through rho0KS and f0KS intermediate states. The values are in agreement with those measured in B0 -) J/psi KS decays within the measurement uncertainties.

COBISS.SI-ID: 22610471
5.
Radiation damage in p-type silicon irradiated with neutrons and protons

Diodes fabricated on high resistivity standard, oxygenated and magnetic Czochralski p-type materials were irradiated with reactor neutrons and 24 GeV/c protons up to an equivalent fluence of ?eq=3×1014 cm-2. Radiation effects on effective trapping times, effective dopant concentration and leakage current were measured at 20 °C. Annealing of defects was performed at 20 and 60 °C.

COBISS.SI-ID: 22397223