KTa0.6Nb0.4O3 thin films on alumina substrates were prepared from acetate-alkoxide derived precursor with 1 h or 24 h of reflux and heating at 900°C. Perovskite films were obtained from the 24 h-refluxed solutions. The 240 nm thick films had room temperature dielectric permittivity value of 1690, dielectric loss value of 0.04 and tunability (C0V / C30V) value of 2.6, measured at 1 MHz with the voltage amplitude of 300 mV. The films, prepared from the 1 h-refluxed solutions, were multi-phase and had inferior dielectric properties.
COBISS.SI-ID: 23108135
Dielectric properties of solution derived K(Ta0.6Nb0.4)O3 thin films on polycrystalline alumina substrates were investigated in radio frequency and in microwave frequency range. The relaxorlike behavior of dielectric properties was confirmed by the fit to the Vogel–Fulcher law. The room temperature values of permittivity and dielectric losses, measured at 10 kHz, are 2430 and 0.08, respectively. The corresponding values, measured at 14.5 GHz, are 590 and 0.52.
COBISS.SI-ID: 22594599