1.

A micro-bolometer for far infrared applications based on boron doped polycrystalline silicon layers

Sources of noise in moderately doped p-type poly Si resistors used as a bolometer sensing element at low frequencies are analysed.

COBISS.SI-ID: 6981204

2.

Design guidelines for a robust electromagnetic compatibility operation of application specific microelectronic system

Proper operation of microelectronic systems is often influenced by electromagnetic interference. While the geometry and power supply voltage of the microelectronic structures are decreasing, the demand for emission robustintegrated circuits is increasing. Designing the integrated circuit for electromagnetic compatibility is therefore necessary to achieve the desired functional performance as well as to meet legal requirements.

COBISS.SI-ID: 6980948