Investigations of biased molecular reorientations and studies of metal/semiconductor potential barriers

The reverse biased voltage, Ur, room temperature C-V characteristics of the ionized cluster beam deposited, ICB, metal/p-Si(100), metal=Pb and Ag, Schottky junctions, are interpreted in terms of the model of metal/metal-enriched interlayer/p-Si substrate structure. It is shown, that the resultant depletion layer capacitance, C, of such a structure, derived in the depletion approximation by incorporating the (modeled) biased voltage dependent excess interface charge density, could successfully describe the low frequency C-V data, as measured on these ICB, Ua=300 V, samples. It is observed that the results of the depletion layer capacitance calculations could successfully predict also the unusual room temperature C-V characteristics of Ag/p-Si(100) Schottky structure, where a strong maximum, at small reverse biased voltages, has been measured. This fact represents, what is believed, the first direct evidence, of the existence of the interface charge density bias voltage dependence.