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Operation of silicon detectors in high radiation fields

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Research activity

Code Science Field Subfield
1.02.01  Natural sciences and mathematics  Physics  Physics of condesed matter 

Code Science Field
P210  Natural sciences and mathematics  Elementary particle physics, quantum field theory 
P265  Natural sciences and mathematics  Semiconductory physics 
Keywords
silicon detectors, radiation hardnes, vertex detectors, beam diagnostics, charge injection
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source: COBISS
Evaluation of bibliographic research performance indicators according to ARIS methodology
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Organisations (1) , Researchers (2)
0106  Jožef Stefan Institute
no. Code Name and surname Research area Role Period No. of publications
1.  15642  PhD Gregor Kramberger  Physics  Researcher  2002 - 2004  1,702 
2.  11985  PhD Marko Zavrtanik  Physics  Head  2002 - 2004  1,103 
Abstract
Recent developments in the field of silicon detectors give hope to enlarge the scope of their application to radiation demanding environments. Studies of operation at cryogenic temperatures have identified the traps responsible for irradiated detector performance degradation. It was also shown that continuous charge carrier injection can be used to reduce trapping and manipulatate the space-charge. Radiation hardness in this modus operandi exceeds all the values known to date. The main objective of this research will therefore be to qualify new radiation hard silicon detectors, based on a conventional materials, used in presence of continuous charge injection.
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