Molecular beam epitaxy (MBE) system

Molecular Beam Epitaxy (MBE) is a very precise deposition method for single crystal thin film growth. It can be used to deposit various materials, such as metals, semiconductors, magnetic materials, oxide and chalcogenide layers, organic molecules, and more. The growth takes place in a UHV chamber where source materials are evaporated and emitted onto a substrate. Temperature controller, shutters, beam flux monitor, mass analyzer and RHEED system (Reflection High-Energy Electron Diffraction) allow for in-situ monitoring and control of the evaporation and growth. The thickness of grown films ranges from single layers to several tens of nm.

Responsible for equipment: PhD Jure Strle
URL: www.nanocenter.si
first access upon agreement with responsible person, experienced operators through reservation system